unisonic technologies co., ltd ugp7n60 preliminary insulated gate bipolar transistor www.unisonic.com.tw 1 of 3 copyright ? 2013 unisonic technologies co., ltd qw-r203-048.a 600v, smps n-channel igbt ? description the utc ugp7n60 is an n-channel igbt. it uses utc?s advanced technology to provide customers with high input impedance, high switching speed and low conduction loss, etc. the utc ugp7n60 is suitable for high voltage switching, high frequency switch mode power supplies. ? features * high switching speed * high input impedance * low conduction loss ? symbol to-220 1 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 UGP7N60L-TA3-T ugp7n60g-ta3-t to-220 g c e tube note: pin assignment: g: gate c: collector e: emitter
ugp7n60 preliminary insulated gate bipolar transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r203-048.a ? absolute maximum ratings (t c =25 c, unless otherwise specified) parameter symbol ratings unit collector-emitter voltage v ces 600 v continuous collector current t c =25c i c 34 a t c =110c 14 a collector current pulsed (note 2) i cm 56 a gate to emitter voltage continuous v ges 20 v gate to emitter voltage pulsed v gem 30 v switching safe operating area at t j =150c ssoa 35 (at 600v) a single pulse avalanche energy at t c =25c e as 25 (at 7a) mj power dissipation total at t c =25c p d 125 w power dissipation derating t c >25c 1.0 w/c junction temperature t j -55~+150 c storage temperature range t stg -55~+150 c notes: 1. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. absolute maximum ratings are those values beyo nd which the device could be permanently damaged. 2. pulse width limited by ma ximum junction temperature. ? thermal characteristics parameter symbol ratings unit junction to case jc 1.0 c/w ? electrical characteristics (t j =25 c, unless otherwise specified) parameter symbol test conditions min typ max unit collector-emitter breakdown voltage bv ces i c =250a, v ge =0v 600 v emitter to collecto r breakdown voltage bv ecs i c =10ma, v ge =0v 20 v collector-emitter leakage current i ces v ce =600v t j =25c 250 a t j =125c 2 ma collector-emitter satu ration voltage v ce(sat) i c =7a, v ge =15v t j =25c 1.3 2.7 v t j =125c 1 2.2 v gate to emitter threshold voltage v ge ( th ) i c =250a 4.5 5.9 7.2 v gate to emitter leakage current i ges v ge =20v 250 na switching soa ssoa t j =150c, r g =25 ? , v ge =15v l=100h, v ge =600v 35 a pulsed avalanche energy e as i ce =7a, l=500h 25 mj gate to emitter plateau voltage v gep i c =7a, v ce =80v 10 v on-state gate charge q g(on) i c =7a, v ce =300v v ge =15v 37 45 nc v ge =20v 48 60 nc current turn-on delay time t don ) i igbt and diode at t j =25c, i ce =7a, v ge =13.5v, r g =50 ? , r l =1 ? , test circuit (note 1) 400 ns current rise time t ri 2.6 s current turn-off delay time t doff ) i 300 ns current fall time t fi 2 s Q note: 1.pulse test: pulse width 50 s.
ugp7n60 preliminary insulated gate bipolar transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r203-048.a ? test circuit and waveforms r g =25 + - v dd fig 1. inductive switching test circuit v ge v ce i ce 90% 10% 90% 10% t d(on)i t ri t fi fig 2. switching test waveforms t d(off)i r l =1 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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